ArticleWang, Y.Q.Electric-ﬁeld-induced resistive switching in metal-oxide interfaces has attracted extensive recent interest. While many agree that lattice defects play a key role, details of the physical processes are far from clear. There is debate, for example, reg . . .
ArticleKinetics and relaxation of electroresistance in transition metal oxides: model for resistive switchingWang, Y.Q.The kinetics of electric-ﬁeld-induced resistive switching across metal ͑Ag͒-Pr0.7Ca0.3MnO3 interfaces has been investigated. The resistance hysteresis ⌬R varies with the pulse amplitude V0 roughly as a step function with existence of a threshold volta . . .
ArticleWang, Y.Q.We report on electric ﬁeld induced bipolar resistive switching in metal electrode-Pr0.7Ca0.3MnO3 interfaces that exhibit hopping transport. The electrical transport data show that the number of hopping steps needed for a carrier to cross the interfaci . . .