The morphological phase diagram is reported for InP nanostructures grown on InP (111)B as a function of temperature and V/III ratio. Indium droplets were used as the catalyst and were generated in situ in the metalorganic vapor-phase epitaxy reactor. . . .

The relationship between crystal quality and the properties of indium phosphide nanowires grown on silicon (111) has been studied by transmission electron microscopy, photoluminescence spectroscopy, and photoelectrochemistry. Wires with no defects and . . .

The self-assembly behavior of the mixture of tetra-tert-butyl zinc(II) phthalocyanine (TB-ZnPc) isomers on a Au(111) surface has been investigated by means of scanning tunneling microscopy (STM). Four tert-butyl groups are added to four peripheral ben . . .

The selective area, metalorganic vapor-phase epitaxy of gallium arsenide on silicon substrates was investigated. Low-temperature arsenic passivation of the silicon surface was realized at 650 °C. A two-step growth method was used to deposit the GaAs f . . .

Vertical indium phosphide nanowires have been grown epitaxially on silicon (111) by metalorganic vapor-phase epitaxy. Liquid indium droplets were formed in situ and used to catalyze deposition. For growth at 350 °C, about 70% of the wires were vertica . . .