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ArticleWang, Y.Q.Electric-field-induced resistive switching in metal-oxide interfaces has attracted extensive recent interest. While many agree that lattice defects play a key role, details of the physical processes are far from clear. There is debate, for example, reg . . .
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ArticleWang, Y.Q.The kinetics of electric-field-induced resistive switching across metal ͑Ag͒-Pr0.7Ca0.3MnO3 interfaces has been investigated. The resistance hysteresis ⌬R varies with the pulse amplitude V0 roughly as a step function with existence of a threshold volta . . .
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ArticleXue, Y.Y.The existence of a negative static dielectric constant has drawn a great deal of theoretical controversy. Experimentally, one has never been observed. However, low-frequency negative capacitance has been widely reported in fields including physics, che . . .
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ArticleWang, Y.Q.We report on electric field induced bipolar resistive switching in metal electrode-Pr0.7Ca0.3MnO3 interfaces that exhibit hopping transport. The electrical transport data show that the number of hopping steps needed for a carrier to cross the interfaci . . .
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ArticleXue, Y.Y.A negative capacitance has been observed in a nanocolloid between 0.1 and 10−5 Hz. The response is linear over a broad range of conditions. The low- dispersions of both the resistance and capacitance are consistent with the free-carrier plasma model, . . .
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ArticleWang, Y.Q.The polarity-dependent resistive switching across metal-Pr0.7Ca0.3MnO3 interfaces is investigated. The data suggest that shallow defects in the interface dominate the switching. Their density and fluctuation, therefore, will ultimately limit the device . . .
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ArticleXue, Y.Y.The significance of a negative dielectric constant has long been recognized. We report here the observation of a field-induced large negative dielectric constant of aggregates of oxide nano-particles at frequencies below ~ 1 Hz at room temperature. Th . . .
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ArticleSun, Y.Y.We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal elec . . .