ArticleKinetics and relaxation of electroresistance in transition metal oxides: model for resistive switchingWang, Y.Q.The kinetics of electric-ﬁeld-induced resistive switching across metal ͑Ag͒-Pr0.7Ca0.3MnO3 interfaces has been investigated. The resistance hysteresis ⌬R varies with the pulse amplitude V0 roughly as a step function with existence of a threshold volta . . .
ArticleWang, Y.Q.The polarity-dependent resistive switching across metal-Pr0.7Ca0.3MnO3 interfaces is investigated. The data suggest that shallow defects in the interface dominate the switching. Their density and ﬂuctuation, therefore, will ultimately limit the device . . .
ArticleSun, Y.Y.We investigate the polarity-dependent ﬁeld-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal elec . . .