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Influence Of Image Forces On Electron Transport In Ferroelectric Tunnel Junctions
We study influence of image forces on conductance of ferroelectric tunnel junctions. We show that the influence of image forces is twofold: (i) they enhance the electroresistance effect due to polarization hysteresis in symmetric tunnel junctions at nonzero bias, and (ii) they produce the electroresistance effect due to hysteresis of dielectric permittivity of ferroelectric barrier. We study dependence of ferroelectric tunnel junction conductance on temperature and show that image forces lead to strong conductance variation with temperature.