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Memory effect in a ferroelectric single-electron transistor: violation of conductance periodicity in the gate voltage
A fundamental property of most single-electron devices with a quasicontinuous quasiparticle spectrum on an island is the periodicity of their transport characteristics in a gate voltage. This property is robust even with respect to placing ferroelectric insulators in the source and drain tunnel junctions. We show that placing a ferroelectric insulator inside the gate capacitance breaks this periodicity. The current-voltage characteristics of this single-electron transistor strongly depends on the ferroelectric polarization and shows a giant memory effect even for negligible ferroelectric hysteresis making this device promising for memory applications.