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First-principles determination of charge carrier mobility in disordered semiconducting polymers
We propose a theoretical method that can predict carrier mobility in disordered semiconducting polymers and organic semiconductors from first principles. The method is based on nonadiabatic ab initio molecular dynamics and static master equation, treating dynamic and static disorder on the same footing. We have applied the method to calculate the hole mobility in disordered poly 3-hexylthiophene conjugated polymers as a function of temperature and electric field and obtained excellent agreements with corresponding experimental results. The method could be used to explore structure-mobility relation in disordered semiconducting polymers/organic semiconductors and aid rational design of these materials.