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Photoluminescence studies in aluminum-doped gallium-arsenide
The photoluminescence of several impure Gallium-Arsenide samples is measured at low temperature. The effects of annealing on Gallium-Arsenide substrates is examined to determine if Group III elements such as Aluminum will occupy Gallium or Arsenic vacancies in the substrate and if the Aluminum will act as an acceptor when occupying Arsenic vacancies. Photoluminescence and Hall measurements indicate that Aluminum may be responsible for a transition from the conduction band to a deep acceptor level. However, it is unclear if Aluminum is occupying Gallium vacancies.