Analytical model of sic based mesfet for determination of device frequency and noise

Preceding a couple of years, a lot of work has been done for wide band gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN). Silicon Carbide (SiC) as a wide band gap material is used in many applications due to its high temperature, high breakdown field, higher power and high saturation velocity. The main objective of this graduate project is to study the electrical parameters extracted from analytical model. In order to develop an accurate modeling of 4H-SiC MESFET, the drain current has been evaluated for linear and non-linear regimes to obtain the I-V characteristics. The linear and non-linear regimes in the I-V characteristics increase the accuracy of the model for any short channel FET device. The transfer characteristics has been evaluated to determine the threshold voltage confirming the depletion mode. The spectral power density has been evaluated to find the influence of the spectral power density on frequency response of 4H-SiC MESFET, which is a vital study to determine the power aided efficiency (PAE). The characteristics of spectral power density and cut-off frequency determine the device performance for maximum power output and maximum frequency performance are elucidated in the spectral power density plot.