Fully analytical back-gate model for n-channel gallium nitrate mesfet's with back channel implant

The primary aim of this project is to analyze the effect of back-gate biasing on electric field, threshold voltage and channel potential. A one-dimensional Poisson's equation has been used to calculate the channel potential and electric field. A device with implanted layers in both the front and back is examined. Two threshold voltages have been analyzed: one with only one channel in the front, and the other with implanted channels in both the front and back. The channel potential and electric field have been evaluated to examine the electric parameters of MESFET with a typical device structure